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| (R) L6571A L6571B HIGH VOLTAGE HALF BRIDGE DRIVER WITH OSCILLATOR TECHNOLOGY: BCD "OFF-LINE" FLOATING SUPPLY VOLTAGE UP TO 600V GND REFERRED SUPPLY VOLTAGE UP TO 18V DRIVER CURRENT CAPABILITY: - SINK CURRENT = 270mA - SOURCE CURRENT = 170mA VERY LOW START UP CURRENT: 150A VERY LOW OPERATING CURRENT: <2mA UNDERVOLTAGE LOCKOUT PROGRAMMABLE OSCILLATOR FREQUENCY dV/dt IMMUNITY UP TO 50V/ns DESCRIPTION The device is a high voltage half bridge driver with built-in oscillator. The frequency of the oscillator can be programmed using external resistor BLOCK DIAGRAM Minidip SO8 ORDERING NUMBERS: L6571A L6571B L6571AD L6571BD and capacitor. The output drivers are designed to drive external n-channel power MOSFET and IGBT. The internal logic assures a minimum dead time to avoid cross-conduction of the power devices. H.V. CVS VS RHV BOOT BIAS REGULATOR LEVEL SHIFTER HIGH SIDE DRIVER HVG CBOOT VS RF RF CF COMP BUFFER OUT LOAD CF COMP VS LOGIC LOW SIDE DRIVER LVG GND D96IN433 June 2000 1/7 L6571A - L6571B ABSOLUTE MAXIMUM RATINGS Symbol IS (*) Parameter Supply Current Oscillator Resistor Voltage Low Side Switch Gate Output High Side Switch Source Output High Side Switch Gate Output Floating Supply Voltage Floating Supply vs OUT Voltage VBOOT Slew Rate (Repetitive) VOUT Slew Rate (Repetitive) Storage Temperature Junction Temperature Ambient Temperature (Operative) Value 25 18 14.6 -1 to VBOOT - 18 -1 to VBOOT 618 18 50 50 -40 to 150 -40 to 150 -40 to 125 Unit mA V V V V V V V/ns V/ns C C C VCF VLVG VOUT VHVG VBOOT VBOOT/OUT dVBOOT/dt dV OUT/dt Tstg Tj Tamb (*) The device has an internal zener clamp between GND and VS (typical 15.6V). Therefore the circuit should not be driven by a DC low impedance power source. Note: ESD immunity for pins 6, 7 and 8 is guaranteed up to 900 V (Human Body Model) THERMAL DATA Symbol Rth j-amb Parameter Thermal Resistance Junction-Ambient Max Minidip 100 SO8 150 Unit C/W RECOMMENDED OPERATING CONDITIONS Symbol VS V BOOT VOUT fout Supply Voltage Floating Supply Voltage High Side Switch Source Output Oscillation Frequency Parameter Min. 10 -1 Max. VCL 500 VBOOT -VCL 200 Unit V V V kHz PIN CONNECTION VS RF CF GND 1 2 3 4 D94IN059 8 7 6 5 BOOT HVG OUT LVG 2/7 L6571A - L6571B ELECTRICAL CHARACTERISTICS (VS = 12V; VBOOT - VOUT = 12V; Tj = 25C; unless otherwise specified.) Symbol VSUVP VSUVN VSUVH VCL ISU Iq IBOOTLK IOUTLK IHVG SO IHVG SI ILVG SO ILVG SI VRFON VRF OFF VCFU VCFL td DC 3 2 5 8 6 7 Pin 1 Parameter VS Turn On Threshold VS Turn Off Threshold VS Hysteresis VS Clamping Voltage Start Up Current Quiescent Current Leakage Current BOOT pin vs GND Leakage Current OUT pin vs GND High Side Driver Source Current High Side Driver Sink Current Low Side Driver Source Current Low Side Driver Sink Current RF High Level Output Voltage RF Low Level Output Voltage CF Upper Threshold CF Lower Threshold Internal Dead Time Duty Cycle, Ratio Between Dead Time + Conduction Time of High Side and Low Side Drivers 1 6 Average Current from Vs Oscillation Frequency No Load, fs = 60KHz RT = 12k CT = 1nF 57 L6571A L6571B IS = 5mA VS < VSUVN VS > VSUVP VBOOT = 580V VOUT = 562V VHVG = 6V VHVG = 6V VLVG = 6V VLVG = 6V IRF = 1mA IRF = -1mA 110 190 110 190 VS -0.05 50 7.7 3.80 0.85 0.50 0.45 7.95 4.05 1.25 0.72 0.5 175 275 175 275 VS -0.2 200 8.2 4.3 1.65 0.94 0.55 Test Condition Min. 8.3 7.3 0.7 14.6 Typ. 9 8 1 15.6 150 500 Max. 9.7 8.7 1.3 16.6 250 700 5 5 Unit V V V V A A A A mA mA mA mA V mV V V s s IAVE fout 1.2 60 1.5 63 mA kHz OSCILLATOR FREQUENCY The frequency of the internal oscillator can be programmed using external resistor and capacitor. The nominal oscillator frequency can be calculated using the following equation: Figure 2: WAVEFORMS VS fOSC= 1 1 = 2 RF CF In 2 1.3863 RF CF where RF and CF are the external resistor and capacitor VSUVP VCF LVG T1 D96IN434 TC 3/7 L6571A - L6571B Figure 3: Typical Dead Time vs. Temperature Dependency (L6571A). Dead time [sec] 1.7 1.6 1.5 1.4 1.3 1.2 1.1 1 0.9 -50 0 50 100 Temperature [C] 150 D96IN378A Figure 4: Typical Frequency vs Temperature Dependency Frequency [KHz] 65 64 63 62 61 60 59 58 57 56 55 -50 -25 0 25 50 75 Temperature [C] 100 125 D96IN379A Figure 5: Typical and Theoretical Oscillator Frequency vs Resistor Value f (KHz) 150 Theoretical 100 90 80 70 60 50 C=1nF D96IN380 Figure 8: Typical Rise and Fall Times vs. Load Capacitance time [nsec] 300 250 D96IN417 C=330pF C=560pF Tr 200 150 Tf 100 30 50 20 0 5 6 7 8 9 10 15 20 30 Resistor Value (Kohm) 40 50 3 4 5 6 C [nF] For both high and low side buffers @25C Tamb 0 1 2 Figure 9: Quiescent Current vs. Supply Voltage. Iq (A) 104 D96IN418 103 102 10 0 2 4 6 8 10 12 14 V S(V) 4/7 L6571A - L6571B mm MIN. A a1 a2 a3 b b1 C c1 D (1) E e e3 F (1) L M S 3.8 0.4 4.8 5.8 1.27 3.81 4.0 1.27 0.6 8 (max.) 0.15 0.016 0.65 0.35 0.19 0.25 0.1 TYP. MAX. 1.75 0.25 1.65 0.85 0.48 0.25 0.5 0.026 0.014 0.007 0.010 0.004 MIN. inch TYP. MAX. 0.069 0.010 0.065 0.033 0.019 0.010 0.020 DIM. OUTLINE AND MECHANICAL DATA 45 (typ.) 5.0 6.2 0.189 0.228 0.050 0.150 0.157 0.050 0.024 0.197 0.244 SO8 (1) D and F do not include mold flash or protrusions. Mold flash or potrusions shall not exceed 0.15mm (.006inch). 5/7 L6571A - L6571B DIM. MIN. A a1 B b b1 D E e e3 e4 F I L Z 3.18 7.95 0.51 1.15 0.356 0.204 mm TYP. 3.32 0.020 1.65 0.55 0.304 10.92 9.75 2.54 7.62 7.62 6.6 5.08 3.81 1.52 0.125 0.313 0.045 0.014 0.008 MAX. MIN. inch TYP. 0.131 MAX. OUTLINE AND MECHANICAL DATA 0.065 0.022 0.012 0.430 0.384 0.100 0.300 0.300 0.260 0.200 0.150 0.060 Minidip 6/7 L6571A - L6571B Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 2000 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 7/7 |
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